Experimental methods in semiconductor physics

General data

Course ID:	1100-4EMSP
Erasmus code / ISCED:	13.2 The subject classification code consists of three to five digits, where the first three represent the classification of the discipline according to the Discipline code list applicable to the Socrates/Erasmus program, the fourth (usually 0) - possible further specification of discipline information, the fifth - the degree of subject determined based on the year of study for which the subject is intended. / (0533) Physics The ISCED (International Standard Classification of Education) code has been designed by UNESCO.
Course title:	Experimental methods in semiconductor physics
Name in Polish:	Experimental methods in semiconductor physics
Organizational unit:	Faculty of Physics
Course groups:	(in Polish) Physics (Studies in English), 2nd cycle; specialization courses (in Polish) Physics (Studies in English); 2nd cycle
Course homepage:	https://www.fuw.edu.pl/~babinski/InformacjaExperimental.htm
ECTS credit allocation (and other scores):	(not available) Basic information on ECTS credits allocation principles: the annual hourly workload of the student’s work required to achieve the expected learning outcomes for a given stage is 1500-1800h, corresponding to 60 ECTS; the student’s weekly hourly workload is 45 h; 1 ECTS point corresponds to 25-30 hours of student work needed to achieve the assumed learning outcomes; weekly student workload necessary to achieve the assumed learning outcomes allows to obtain 1.5 ECTS; work required to pass the course, which has been assigned 3 ECTS, constitutes 10% of the semester student load. view allocation of credits
Language:	English
Main fields of studies for MISMaP:	physics
Short description:	A review of modern experimental techniques available for characterization of semiconductor materials and structures will be given. The lecture will start with a short reminder of basic properties of solids with a special emphasis on semiconductors and their low-dimensional structures. Next the following experimental methods will be addressed with some introduction on their physical backgrounds: • Semiconductors, Semiconductor Nanostructures • Growth Techniques • Structural methods: • Optical methods: • Electrical methods: • Measurements in magnetic fields • Measurements in extreme conditions.
Full description:	• Semiconductors, Semiconductor Nanostructures • Growth Techniques MOCVD, MBE • Electrical methods: Conductivity, photocurrent, capacitance methods: thermally stimulated capacitance (TSCap), deep level transient spectroscopy (DLTS). • Measurements in magnetic field: Hall effect, quantum Hall effect, Shubnikov de Haas oscillations of the conductivity, resonance techniques: EPR, NMR, spin echo, ODMR. • Measurements in extreme conditions: High pressure, uniaxial stress,
Bibliography:	J. H. Davis, The physics of low-dimensional semiconductors, an introduction, Cambridge University Press, 1998 P. Yu and M. Cardona, Fundamentals of Semiconductors, Physics and Materials Properties, Springer 1999 H.Ibach and H.Lüth, Solid State Physics, An Introduction to Principles of Materials Science, Springer 1995 Characterization of Semiconductor Heterostructures and Nanostructures, C.Lamberti ed. Elsevier 2008
Assessment methods and assessment criteria:	Oral examination
Internships:	N/A

This course is not currently offered.

Course descriptions are protected by copyright.
Copyright by University of Warsaw, Faculty of Physics.